A Scanning Electron Diffraction Study of Vapor‐Deposited and Ion Implanted Thin Films of Ge (II)

Abstract

The reduced intensity function and the structure factor for several models of amorphous Ge have been calculated. These include the diamond cubic, the amorphon, and a random network model. It is found that the data on amorphous Ge is best described by the random network models. Also the effect of interparticle interference function in evaluating the models is taken into account. Copyright © 1973 WILEY‐VCH Verlag GmbH & Co. KGaA