Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
A series of digital simulations indicates that an accurate measurement of the surface-tension temperature coefficient is important to the understanding of melt flow in Czochralski growth of silicon. If that parameter lies near the upper end of its presently conjectured range, the flow is also sensitive to the value of the viscosity coefficient. © 1982.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
T.N. Morgan
Semiconductor Science and Technology
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics