A Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory Applications

Abstract

We present a new selector only memory material, CuGeSe, with low program current and fast switch speed properties. The switching mechanism is studied in depth and element migration is verified during the switching of the material. We also discuss application of the material for 3D Xpoint and 3D vertical memory, as well as propose a modified 1/3 V testing scheme for 3D vertical memory to mitigate leakage current and improve scaling.