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Journal of Crystal Growth
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A new technique for multilayer LPE

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Abstract

A novel technique is presented which allows LPE deposition of a large number of layers without the disadvantages arising from sliding container parts. Solutions of different compositions or containing different dopants are arranged in separate chambers. By rotation of the whole device the solutions move from one chamber to the next one without intermixing, and by controlled cooling, epitaxial layers are deposited onto the substrates fixed at the chamber walls. The sequence of the layers is determined by the sense and the angles of rotation, and the thickness of each layer is determined, among many other factors, by the cooling rate and dipping time. Up to 15 layers of III-V compounds have so far been produced in a double-screw device, with thicknesses between 0.1 to 10 μm and thickness reproductivity of about 10%. In addition, the fabrication of LED's, III-V lasers, and solar cells, and possibly superlattice devices by the MultiLPE technique can be considered. © 1977.

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Journal of Crystal Growth

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