A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOI CMOS technology

Abstract

The design of a low-voltage 40-GHz complementary voltage-controlled oscillator (VCO) with 15% frequency tuning range fabricated in 0.13-μm partially depleted silicon-on-insulator (SOI) CMOS technology is reported. Technological advantages of SOI over bulk CMOS are demonstrated, and the accumulation MOS (AMOS) varactor limitations on frequency tuning range are addressed. At 1.5-V supply, the VCO core and each output buffer consumes 11.25 mW and 3 mW of power, respectively. The measured phase noise at 40-GHz is - 109.73 dBc/Hz at 4-MHz offset from the carrier, and the output power is -8 dBm. VCO performance using high resistivity substrate (∼300-Ω·cm) has the same frequency tuning range but 2 dB better phase noise compared with using low resistivity substrate (10 Ω·cm). The VCO occupies a chip area of only 100 μm by 100 μm (excluding pads).