Publication
IEEE Journal of Solid-State Circuits
Paper

A Large VDSData Retention Test Pattern for DRAM’s

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Abstract

This paper describes a test pattern for testing DRAM cell data retention that differs from conventional retention time tests. The test pattern is applicable to non-VDD bitline precharge designs, and is specifically designed to test for worst-case subthreshold leakage through the cell access device by holding bit lines in their latched position for extended periods. This action stresses the cell access devices with the worst-case VDSacross them. The reasons to perform this test on a DRAM are reviewed, its advantages over standard retention time tests are described, and its ability to differentiate access device leakage from isolation leakage is discussed. Measured results on a 1-Mb chip are shown, illustrating the test pattern’s effectiveness in screening subthreshold leakage. © 1992 IEEE

Date

01 Jan 1992

Publication

IEEE Journal of Solid-State Circuits

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