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Publication
Device Research Conference 2003
Conference paper
A Fin-type independent-double-gate NFET
Abstract
We present, to our knowledge, the first published experimental integration of two independent gates on a FinFET. The devices have symmetric gate oxide physical thicknesses of 8.5 nm, gate lengths ranging from 0.25μm to 5μm, and designed fin thicknesses ranging from 10 nm to 100 nm. Independent-gate operation is demonstrated by modulating saturated drain current with both front and back gate voltages.