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Publication
Microlithography 2000
Conference paper
193 nm positive tone bilayer resist based on norbornene-maleic anhydride copolymers
Abstract
A 193-nm bilayer resist was developed based on alternating copolymers of silicon-substituted norbornene monomers and maleic anhydride. An optimized resist formulation with high resolution and contrast was obtained. The resist had 70 nm 1:2 features with an alternating phase shift mask. Preliminary oxygen reactive ion etching transfer results are presented.