1.3 μm InGaAs MSM photodetector with abrupt ingaas/alinas interface

Abstract

We have fabricated long-wavelength abrupt-junction InGaAs/AlInAs metal-semiconductor-metal photodetectors that are potentially compatible with AlInAs/InGaAs H-MESFET’s. The detectors have nanoampere dark currents and low capacitance. The responsivity at 10 MHz is 0.32 A/W, corresponding to at least 90% internal collection efficiency. We discuss the device performance limitations due to charge storage at the InGaAs/AlInAs interface, and we show that despite charge pile up, high data rates (> 3 GHz) have been achieved at low bias voltages, provided the incident intensity is low. © 1991 IEEE.