PaperHigh-frequency operation of heavily carbon-doped Ga0.51In 0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxyT.J. De Lyon, J. Woodall, et al.Applied Physics Letters
PaperSi diffusion and segregation in low-temperature grown GaAsK.L. Kavanagh, J.C.P. Chang, et al.Applied Physics Letters
Conference paperPerformance of In0.53Ga0.47As metal-semiconductor-metal photodetectors at 1.55 μmF. Tong, D.T. McInturff, et al.LEOS 1992
