Improved frequency response in a SiGe npn device through improved dopant activation
- Jim Adkisson
- Marwan H. Khater
- et al.
- 2012
- ECS Meeting 2012
Conference paper
Publications
8 results at ECS Meeting 2012
A self-aligned sacrificial emitter process for high performance SiGe HBT in BiCMOS
- Q. Liu
- Jim Adkisson
- et al.
- 2012
- ECS Meeting 2012
Conference paperPhenomena of dielectric capping layer insertion into high-κ metal gate stacks in gate-first/gate-last integration
- H. Jagannathan
- P. Jamison
- et al.
- 2012
- ECS Meeting 2012
Conference paperMicrostructure development in epitaxially grown in-situ Boron and Carbon co-doped strained 60% Silicon-Germanium layers
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ECS Meeting 2012
Conference paperAggressive sige channel gate stack scaling by remote oxygen scavenging: Gate-first pFET performance and reliability
- Martin M. Frank
- Eduard A. Cartier
- et al.
- 2012
- ECS Meeting 2012
Conference paperIn quest of a fast, low-voltage digital switch
- T.N. Theis
- 2012
- ECS Meeting 2012
Conference paperGas source depletion study of high-order silanes of silicon-based epitaxial layers grown with RPCVD and low temperatures
- Keith Chung
- Paul Brabant
- et al.
- 2012
- ECS Meeting 2012
Conference paperUltra low temperature epitaxial growth of strained Si directly on Si substrates
- Davood Shahrjerdi
- Bahman Hekmatshoar
- et al.
- 2012
- ECS Meeting 2012
Conference paper