Effect and model of gate oxide breakdown on CMOS invertersR. RodríguezJ.H. Stathiset al.2003INFOS 2003Conference paper
Interface trapping properties of nMOSFETs with Al2O 3/SiOxNy/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiationJ.A. FelixH.D. Xionget al.2003INFOS 2003Conference paper
Statistics of progressive breakdown in ultra-thin oxidesB.P. LinderJ.H. Stathis2003INFOS 2003Conference paper
Charge trapping and detrapping in HfO2 high-κ gate stacksE. GusevC. D'Emicet al.2003INFOS 2003Conference paper
Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID-VGA. KerberE. Cartieret al.2003INFOS 2003Conference paper