Interface trapping properties of nMOSFETs with Al2O 3/SiOxNy/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiation
- J.A. Felix
- H.D. Xiong
- et al.
- 2003
- INFOS 2003
Publications
Date
Featured collections
Popular topics
5 results at INFOS 2003
Statistics of progressive breakdown in ultra-thin oxides
- B.P. Linder
- J.H. Stathis
- 2003
- INFOS 2003
Effect and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- INFOS 2003
Charge trapping and detrapping in HfO2 high-κ gate stacks
- E. Gusev
- C. D'Emic
- et al.
- 2003
- INFOS 2003
Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID-VG
- A. Kerber
- E. Cartier
- et al.
- 2003
- INFOS 2003