0.026μm2 high performance Embedded DRAM in 22nm technology for server and SOC applications
- C. Pei
- G. Wang
- et al.
- 2014
- IEDM 2014
Publications
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Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2014
- IEDM 2014
Circuit-level benchmarking of access devices for resistive nonvolatile memory arrays
- Pritish Narayanan
- Geoffrey W. Burr
- et al.
- 2014
- IEDM 2014
First demonstration of high-Ge-content strained-Si1-xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- IEDM 2014
Capacity optimization of emerging memory systems: A shannon-inspired approach to device characterization
- Jesse H. Engel
- Sukru Burc Eryilmaz
- et al.
- 2014
- IEDM 2014
Ultra-high-Q air-core slab inductors for on-chip power conversion
- Naigang Wang
- David Goren
- et al.
- 2014
- IEDM 2014
Experiment and model for deviation from Pelgrom scaling relation in device width
- Ning Lu
- J. Brown
- et al.
- 2014
- IEDM 2014
Reliability challenges for the 10nm node and beyond
- 2014
- IEDM 2014
Thin-film heterojunction field-effect transistors for ultimate voltage scaling and low-temperature large-area fabrication of active-matrix backplanes
- Bahman Hekmatshoar
- Ali Afzali-Ardakani
- 2014
- IEDM 2014
High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014