Exploiting the State Dependency of Conductance Variations in Memristive Devices for Accurate In-Memory ComputingAthanasios VasilopoulosJulian Buchelet al.2023IEEE T-ED
Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In-Memory ComputingTommaso StecconiRoberto Guidoet al.2022Advanced Electronic Materials
Efficient Scaling of Large Language Models with Mixture of Experts and 3D Analog In-Memory ComputingJulian BüchelA. Vasilopouloset al.2025Nat. Comput. Sci.
Demonstration of 4-quadrant analog in-memory matrix multiplication in a single modulationManuel Le GalloOscar Hrynkevychet al.2024npj Unconv. Comput.
Read Noise Analysis in Analog Conductive-Metal-Oxide/HfO𝑥 ReRAM DevicesDavide LombardoSaketh Ram Mamidalaet al.2024DRC 2024
How to Model the Training and Inference of Analog-Based In-Memory Computing (AIMC) SystemsCorey Liam LammieManuel Le Galloet al.2024ISCAS 2024
Zero-shot Classification using Hyperdimensional ComputingSamuele RuffinoKumudu Geethan Karunaratneet al.2024DATE 2024
Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfOx ReRAM devicesDonato Francesco FalconeStephan Menzelet al.2024Nanoscale Horizons