Publications

18 results at IEDM 2004

SiGe HBT technology with f _max/f _T = 350/300 GHz and gate delay below 3.3 ps
- - M. Khater
  - J.-S. Rieh
  - et al.
- 2004
- IEDM 2004
Spintronic materials and devices: Past, present and future!
- - Stuart S.P. Parkin
- 2004
- IEDM 2004
Interface engineering for enhanced electron mobilities in W/HfO ₂ gate stacks
- - A.C. Callegari
  - P. Jamison
  - et al.
- 2004
- IEDM 2004
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
- - H.S. Yang
  - R. Malik
  - et al.
- 2004
- IEDM 2004
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- - E. Gusev
  - C. Cabral Jr.
  - et al.
- 2004
- IEDM 2004
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- - J. Cai
  - K. Rim
  - et al.
- 2004
- IEDM 2004
Aggressively scaled (0.143 μm ²) 6T-SRAM cell for the 32 nm node and beyond
- - D. Fried
  - J. Hergenrother
  - et al.
- 2004
- IEDM 2004
Charge trapping in aggressively scaled metal gate/high-κ stacks
- - E. Gusev
  - V. Narayanan
  - et al.
- 2004
- IEDM 2004