Valence band Landau level mixing and anisotropy in Si1-xGex investigated by resonant magnetotunneling
- A. Zaslavsky
- D.A. Grützmacher
- et al.
- 1994
- Surface Science
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71 results for T.O. Sedgwick
Cyclotron resonance studies of two-dimensional holes in strained Si 1-xGex/Si quantum wells
- J.-P. Cheng
- V.P. Kesan
- et al.
- 1993
- Applied Physics Letters
Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Applied Physics Letters
In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells
- A. Zaslavsky
- T.P. Smith III
- et al.
- 1993
- Physical Review B
Observation of valence-band Landau-level mixing by resonant magnetotunneling
- A. Zaslavsky
- D.A. Grützmacher
- et al.
- 1993
- Physical Review B
Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Journal of Electronic Materials
Growth Rate Enhancement of Heavy n- and P-Type Doped Silicon Deposited by Atmospheric-Pressure Chemical Vapor Deposition at Low Temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1993
- JES
Effects of Trace Surface Oxidation in Low Temperature Epitaxy Grown from Dichlorosilane
- T.O. Sedgwick
- P. Agnello
- et al.
- 1993
- JES
Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition
- A. Zaslavsky
- D.A. Grützmacher
- et al.
- 1992
- Applied Physics Letters