Publication
Applied Physics Letters
Paper

Low-temperature selective epitaxial growth of silicon at atmospheric pressure

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Abstract

Epitaxial Si has been grown selectively on oxide-patterned substrates from 850 down to 600°C for the first time in the Si-Cl-H system at atmospheric pressure. Si deposition was achieved by hydrogen reduction of dichlorosilane in an ultraclean system using a load lock. Epitaxy was achieved at low temperatures only when the hydrogen was purified to remove traces of H2O and O2 implying that an oxygen-free environment is the most important factor controlling epitaxy at low temperatures. Cross-sectional transmission electron micrographs reveal perfect crystallinity in the epitaxial layer and a totally clean and featureless interface between epitaxy and substrate.

Date

01 Dec 1989

Publication

Applied Physics Letters

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