Lateral strain profile as key technology booster for all-silicon tunnel FETs
- Kathy Boucart
- Adrian Mihai Ionescu
- et al.
- 2009
- IEEE Electron Device Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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4 results for Kathy Boucart
A simulation-based study of sensitivity to parameter fluctuations of silicon tunnel FETs
- Kathy Boucart
- Adrian M. Ionescu
- et al.
- 2010
- ESSDERC 2010
Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation
- Kathy Boucart
- Adrian M. Ionescu
- et al.
- 2009
- ESSDERC 2009
Asymmetrically strained all-silicon multi-gate n-Tunnel FETs
- M. Najmzadeh
- K. Boucart
- et al.
- 2010
- Solid-State Electronics