Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide
- D.K. Sadana
- J.P. De Souza
- et al.
- 1991
- Applied Physics Letters
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188 results for Devendra Sadana
Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs
- A.C. Callegari
- D.K. Sadana
- et al.
- 1991
- Applied Physics Letters
Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs
- H. Baratte
- D.K. Sadana
- et al.
- 1990
- Journal of Applied Physics
Effect of F co-implant during annealing of Be-implanted GaAs
- P.E. Hallali
- H. Baratte
- et al.
- 1990
- Applied Physics Letters
Annealing behavior of GaAs implanted with Si+ and SiF + and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap
- J.P. De Souza
- D.K. Sadana
- et al.
- 1990
- Applied Physics Letters
N+ doping of gallium arsenide by rapid thermal oxidation of a silicon cap
- D.K. Sadana
- J.P. De Souza
- et al.
- 1990
- Applied Physics Letters
Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs
- M. Eizenberg
- A.C. Callegari
- et al.
- 1989
- Applied Physics Letters
The formation of a continuous amorphous layer by room-temperature implantation of boron into silicon
- K.S. Jones
- D.K. Sadana
- et al.
- 1988
- Journal of Applied Physics