Silicon fin line edge roughness determination and sensitivity analysis by Mueller matrix spectroscopic ellipsometry based scatterometry
- Dhairya Dixit
- Samuel O'Mullane
- et al.
- 2015
- SPIE Advanced Lithography 2015
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14 results for Alain C. Diebold
Higher-K formation in atomic layer deposited Hf1-xAlxOy
- Kandabara Tapily
- Steven Consiglio
- et al.
- 2014
- ECSSMEQ 2014
Effect of germanium concentration on the dielectric function of strained Si 1-xGe x films
- Manasa Medikonda
- Gangadhara R. Muthinti
- et al.
- 2012
- ISTDM 2012
X-ray scattering methods for porosity metrology of low-k thin films
- C.M. Settens
- V.K. Kamineni
- et al.
- 2009
- FCMN 2009
Spectroscopic ellipsometry of porous low-κ dielectric thin films
- V.K. Kamineni
- C.M. Settens
- et al.
- 2009
- FCMN 2009
Applications of image diagnostics to metrology quality assurance and process control
- John A. Allgair
- Victor V. Boksha
- et al.
- 2003
- SPIE Advanced Microelectronic Manufacturing 2003
Quantifying non-centrosymmetric orthorhombic phase fraction in 10 nm ferroelectric Hf0.5Zr0.5O2films
- Vineetha Mukundan
- Steven Consiglio
- et al.
- 2020
- Applied Physics Letters
Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications
- Sonal Dey
- Kai-Hung Yu
- et al.
- 2017
- JVSTA
Sensitivity analysis and line edge roughness determination of 28-nm pitch silicon fins using Mueller matrix spectroscopic ellipsometry-based optical critical dimension metrology
- Dhairya Dixit
- Samuel O'Mullane
- et al.
- 2015
- J. Micro/Nanolithogr. MEMS MOEMS
Optical properties of pseudomorphic Ge1-xSnx (x = 0 to 0.11) alloys on Ge(001)
- Manasa Medikonda
- Gangadhara R. Muthinti
- et al.
- 2014
- JVSTB