Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission
- Zhen Zhang
- Joanna Atkin
- et al.
- 2012
- IEEE T-ED
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79 results for Marinus Hopstaken
Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- M. Hopstaken
- D. Pfeiffer
- et al.
- 2012
- Surface and Interface Analysis
Leveler effect and oscillatory behavior during copper electroplating
- Q. Huang
- B.C. Baker-O'Neal
- et al.
- 2012
- JES
Band alignment at the Cu2 ZnSn (SxSe1-x) 4 /CdS interface
- Richard Haight
- Aaron Barkhouse
- et al.
- 2011
- Applied Physics Letters
High temperature (1000°C) compatible Y-La-Si-O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness
- Catherine Dubourdieu
- E. Cartier
- et al.
- 2011
- Applied Physics Letters
Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
- Marinus Hopstaken
- Michael Gordon
- et al.
- 2010
- Journal of Vacuum Science and Technology B
Oxygen migration in TiO2-based higher-k gate stacks
- Sangbum Kim
- Stephen L. Brown
- et al.
- 2010
- Journal of Applied Physics
Oxygen passivation of vacancy defects in metal-nitride gated HfO 2/SiO2/Si devices
- E. Cartier
- M. Hopstaken
- et al.
- 2009
- Applied Physics Letters
Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)
- Martin M. Frank
- SangBum Kim
- et al.
- 2009
- Microelectronic Engineering