Higher-K formation in atomic layer deposited Hf1-xAlxOy
- Kandabara Tapily
- Steven Consiglio
- et al.
- 2014
- ECSSMEQ 2014
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10 results for Robert D. Clark
Optimizing band-edge high-κ/metal gate n-MOSFETs with ALD lanthanum oxide cap layers-oxidant and positioning effects
- Robert D. Clark
- H. Jagannathan
- et al.
- 2010
- ECS Transactions
Methodology of ALD HfO2 high-κ gate dielectric optimization by cyclic depositions and anneals
- H. Jagannathan
- Robert D. Clark
- et al.
- 2010
- ECS Transactions
Engineering band-edge high-κ/metal gate n-MOSFETs with cap layers containing group IIA and IIIB elements by atomic layer deposition
- H. Jagannathan
- L.F. Edge
- et al.
- 2009
- ECS Meeting 2009
High-K gate dielectric structures by atomic layer deposition for the 32nm and beyond nodes
- R.D. Clark
- S. Consiglio
- et al.
- 2008
- ECS Meeting 2008
Process and electrical characteristics of MO-ALD HfO2 films for high-K gate applications grown in a production-worthy 300 mm deposition system
- R.D. Clark
- C.S. Wajda
- et al.
- 2007
- ECS Meeting 2007
Quantifying non-centrosymmetric orthorhombic phase fraction in 10 nm ferroelectric Hf0.5Zr0.5O2films
- Vineetha Mukundan
- Steven Consiglio
- et al.
- 2020
- Applied Physics Letters
Electrical enhancement and higher-k engineering in ultra-thin atomic layer deposited Hf1-xAlxOy films
- K. Tapily
- S. Consiglio
- et al.
- 2014
- ECS J. Solid State Sci. Technol.
Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
- Steven Consiglio
- Kandabara Tapily
- et al.
- 2014
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf 1-xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme
- Relja Vasić
- Steven Consiglio
- et al.
- 2013
- Journal of Applied Physics