Voltage polarity effects in Ge2Sb2Te 5-based phase change memory devices
- Alvaro Padilla
- Geoffrey W. Burr
- et al.
- 2011
- Journal of Applied Physics
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56 results for Kailash Gopalakrishnan
Phase change memory technology
- Geoffrey W. Burr
- Matthew J. Breitwisch
- et al.
- 2010
- Journal of Vacuum Science and Technology B
Overview of candidate device technologies for storage-class memory
- Geoffrey W. Burr
- Bülent N. Kurdi
- et al.
- 2008
- IBM J. Res. Dev
Minimizing linewidth roughness in Step and Flash Imprint Lithography
- Niyaz Khusnatdinov
- Gerard M. Schmid
- et al.
- 2008
- Microelectronic Engineering
Impact ionization MOS (I-MOS) - Part I : Device and circuit simulations
- Kailash Gopalakrishnan
- Peter B. Griffin
- et al.
- 2005
- IEEE Transactions on Electron Devices
Impact ionization MOS (I-MOS) - Part II : Experimental results
- Kailash Gopalakrishnan
- Raymond Woo
- et al.
- 2005
- IEEE Transactions on Electron Devices