High performance gate first HfSiON dielectric satisfying 45nm node requirements
- M.A. Quevedo-Lopez
- S. Krishnan
- et al.
- 2005
- IEDM 2005
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2 results for Craig Huffman
Moving from thin films to atomic layers - Atomic layer etching
- Craig Huffman
- Eric A. Joseph
- et al.
- 2015
- VLSI-TSA 2015