Hybrid methodology to model random dopant fluctuations in low doped FinFETs
- Samarth Agarwal
- Jeffrey B. Johnson
- et al.
- 2015
- Journal of Computational Electronics
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13 results for Stephen S. Furkay
Finite element based three dimensional Schrödinger solver for nano-scale devices
- Samarth Agarwal
- Kai Xiu
- et al.
- 2014
- Journal of Computational Electronics
22nm technology yield optimization using multivariate 3D virtual fabrication
- B. Cipriany
- B. Jagannathan
- et al.
- 2013
- SISPAD 2013
Modeling and characterization of gate leakage in high-K metal gate technology-Based embedded DRAM
- Mohit Bajaj
- Rajan K. Pandey
- et al.
- 2013
- IEEE T-ED
Ab initio study of metal grain orientation-dependent work function and its impact on FinFET variability
- Samarth Agarwal
- Rajan Kumar Pandey
- et al.
- 2013
- IEEE T-ED
A Simple, unified 3D stress model for device design in stress-enhanced mobility technologies
- Arvind Kumar
- Kai Xiu
- et al.
- 2012
- SISPAD 2012
Exploring MOL design options for a 20nm CMOS technology using TCAD
- Andreas Scholze
- Stephen Furkay
- et al.
- 2011
- SISPAD 2011
Modeling gate-pitch scaling impact on stress-induced mobility and external resistance for 20nm-node MOSFETs
- Seong-Dong Kim
- Sameer Jain
- et al.
- 2010
- SISPAD 2010
Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs
- Rajan K. Pandey
- Kota V. R. M. Murali
- et al.
- 2010
- IEEE T-ED
Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
- S. Voldman
- P. Juliano
- et al.
- 2000
- Annual Proceedings - Reliability Physics (Symposium)