Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages
- Vishal A. Tiwari
- Rama Divakaruni
- et al.
- 2016
- Japanese Journal of Applied Physics
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. We’re currently adding our back catalog of more than 110,000 publications. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.