Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET DevicesShogo MochizukiB. Colombeauet al.2018IEDM 2018
Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around DevicesShogo MochizukiB. Colombeauet al.2020VLSI Technology 2020