High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
- E. Leobandung
- H. Nayakama
- et al.
- 2005
- VLSI Technology 2005
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61 results for A. Ray
A 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-μm SOI CMOS technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ESSCIRC 2003
A Power-Optimized Widely-Tunable 5-GHz Monolithic VCO in a Digital SOI CMOS Technology on High Resistivity Substrate
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- ISLPED 2003
3-Dimensional Vertical Parallel Plate Capacitors in an SOI CMOS Technology for Integrated RF Circuits
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- VLSI Circuits 2003
A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology
- J.O. Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003
A 0.123 mW 7.25 GHz Static Frequency Divider by 8 in a 120-nm SOI Technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003
High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- RFIC 2003
A power-efficient 33 GHz 2:1 static frequency divider in 0.12-μm SOI CMOS
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- RFIC 2003
High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- IMS 2003
Suitability of scaled SOI CMOS for high-frequency analog circuits
- N. Zamdmer
- J.O. Plouchart
- et al.
- 2002
- ESSDERC 2002