NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
- Sangbum Kim
- Masatoshi Ishii
- et al.
- 2015
- IEDM 2015
Publications
62 results for A. Ray
Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application
- H.Y. Cheng
- Matthew Brightsky
- et al.
- 2013
- IEDM 2013
A scalable volume-confined phase change memory using physical vapor deposition
- S.C. Lai
- S. Kim
- et al.
- 2013
- VLSI Technology 2013
Optimization of programming current on endurance of phase change memory
- Sangbum Kim
- Pei-Ying Du
- et al.
- 2012
- VLSI-TSA 2012
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm
- N. Tega
- H. Miki
- et al.
- 2009
- VLSI Technology 2009
Silicon-on-insulator MOSFETs with hybrid crystal orientations
- M. Yang
- K.K. Chan
- et al.
- 2006
- VLSI Technology 2006
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
- E. Leobandung
- H. Nayakama
- et al.
- 2005
- VLSI Technology 2005
A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2004
- IEEE Journal of Solid-State Circuits
A Power-Optimized Widely-Tunable 5-GHz Monolithic VCO in a Digital SOI CMOS Technology on High Resistivity Substrate
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- ISLPED 2003