Interface trapping properties of nMOSFETs with Al2O 3/SiOxNy/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiation
- J.A. Felix
- H.D. Xiong
- et al.
- 2003
- INFOS 2003
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.