Properties of Zn implanted GaN
- S. Strite
- P.W. Epperlein
- et al.
- 1995
- MRS Fall Meeting 1995
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4 results for A. Rockett
Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
- S. Strite
- A. Pelzmann
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing
- T. Suski
- J. Jun
- et al.
- 1998
- Journal of Applied Physics
Valence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy
- G. Martin
- S. Strite
- et al.
- 1995
- Journal of Electronic Materials