Experimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAs
- E.S. Harmon
- M.L. Lovejoy
- et al.
- 1993
- Applied Physics Letters
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11 results for T.J. De Lyon
Doping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga0.51In0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbon
- M.L. Lovejoy
- M.R. Melloch
- et al.
- 1992
- Applied Physics Letters
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- T.J. De Lyon
- N.I. Buchan
- et al.
- 1991
- Applied Physics Letters
High-frequency operation of heavily carbon-doped Ga0.51In 0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Applied Physics Letters
Valence-band-edge shift due to doping in p+ GaAs
- J.A. Silberman
- T.J. De Lyon
- et al.
- 1991
- Applied Physics Letters
Fermi level pinning at epitaxial Si on GaAs(100) interfaces
- J.A. Silberman
- T.J. De Lyon
- et al.
- 1991
- Applied Physics Letters
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xP
- T.J. de Lyon
- N.I. Buchan
- et al.
- 1991
- Journal of Crystal Growth
Carbon doping of GaP, GalnP, and AlinP in metalorganic molecular beam epitaxy using methyl and ethyl precursors
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Low surface recombination velocity and contact resistance using p +/p carbon-doped GaAs structures
- T.J. De Lyon
- J.A. Kash
- et al.
- 1990
- Applied Physics Letters