The effect of pressure on the band-gap energy in ordered GaInP and AlGaInP grown by MOVPE
- T. Kobayashi
- H. Kojima
- et al.
- 1995
- Journal of Physics and Chemistry of Solids
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6 results for Willi Heuberger
(A1)GaInP Laser with Lateral Confinement by Epitaxial Growth on Nonplanar Substrates
- Gian-Luca Bona
- Peter Unger
- et al.
- 1993
- IEEE Photonics Technology Letters
Optical study of extended-molecular-layer flat islands in lattice-matched In0.53Ga0.47As/InP and In0.53Ga0.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles
- R. Sauer
- S. Nilsson
- et al.
- 1992
- Physical Review B
Compositional variation and ordering of GaxIn1-xP on GaAs structured substrates
- N.I. Buchan
- A. Jakubowicz
- et al.
- 1992
- Applied Physics Letters
MOVPE of AlGaInP/GaInP heterostructures for visible lasers
- P. Roentgen
- W. Heuberger
- et al.
- 1991
- Journal of Crystal Growth
Shallow implants into GaAs
- Volker Graf
- Willi Heuberger
- 1987
- Nuclear Inst. and Methods in Physics Research, B
