Michiel Sprik
Journal of Physics Condensed Matter
The current status of MOVPE for high-quality AlGaInP/GaInP heterostructure visible laser diodes is reviewed. It is shown that a detailed understanding of atomic ordering, heterointerface properties, and non-radiative traps in AlGaInP and dopant incorporation is necessary to obtain high-performance laser diodes emitting in the 600 nm range. In detail, the influence of a PH3 purifier on optical properties of AlGaInP and AlGaInP/GaInP heterostructures is discussed, and for controlled p-doping of AlGaInP, the effects of Zn and Mg incorporation are compared. Improvements in material quality and doping control have enabled us to realize index guided, AlGaInP/GaInP double heterostructure lasers emitting at λ ∼ 670 nm with a cw output power exceeding 20 mW and a maximum operation temperature of 100°C. © 1991.
Michiel Sprik
Journal of Physics Condensed Matter
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
T.N. Morgan
Semiconductor Science and Technology
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001