MOVPE of AlGaInP/GaInP heterostructures for visible lasers

Abstract

The current status of MOVPE for high-quality AlGaInP/GaInP heterostructure visible laser diodes is reviewed. It is shown that a detailed understanding of atomic ordering, heterointerface properties, and non-radiative traps in AlGaInP and dopant incorporation is necessary to obtain high-performance laser diodes emitting in the 600 nm range. In detail, the influence of a PH3 purifier on optical properties of AlGaInP and AlGaInP/GaInP heterostructures is discussed, and for controlled p-doping of AlGaInP, the effects of Zn and Mg incorporation are compared. Improvements in material quality and doping control have enabled us to realize index guided, AlGaInP/GaInP double heterostructure lasers emitting at λ ∼ 670 nm with a cw output power exceeding 20 mW and a maximum operation temperature of 100°C. © 1991.