Defect microchemistry at the SiO2/Si interface
- G.W. Rubloff
- K. Hofmann
- et al.
- 1987
- Physical Review Letters
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6 results for K. Hofmann
Acceleration Factors for the Decomposition of Thermally Grown SiO2 Films
- S.I. Raider
- 2019
- JES
Role of oxygen in defect-related breakdown in thin SiO2 films on Si (100)
- K. Hofmann
- G.W. Rubloff
- et al.
- 1987
- Journal of Applied Physics
Hole trapping in SiO2 films annealed in low-pressure oxygen atmosphere
- K. Hofmann
- D.R. Young
- et al.
- 1987
- Journal of Applied Physics
High temperature reaction and defect chemistry at the Si/SiO2 interface
- K. Hofmann
- G.W. Rubloff
- et al.
- 1987
- Applied Surface Science
Defect formation in thermal SiO2 by high-temperature annealing
- K. Hofmann
- G.W. Rubloff
- et al.
- 1986
- Applied Physics Letters