Properties of DX centers in AlxGa1-xAs co-doped with boron and silicon
- P.M. Mooney
- M.A. Tischler
- et al.
- 1991
- Applied Physics Letters
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49 results for M.A. Tischler
Effect of structural parameters on transport characteristics of GaInAs/AlInAs two-dimensional electron gases grown by molecular beam epitaxy
- M.A. Tischler
- B.D. Parker
- 1991
- Applied Physics Letters
Determination of epitaxial AlxGa1-xAs composition from x-ray diffraction measurements
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
Selective epitaxy of GaAs, AlxGa1-xAs, and InxGa1-xAs
- T.F. Kuech
- M.S. Goorsky
- et al.
- 1991
- Journal of Crystal Growth
Epitaxial growth of GaAs with (C2H5)2GaCl and AsH3 in a hot-wall system
- N.I. Buchan
- T.F. Kuech
- et al.
- 1991
- Journal of Crystal Growth
High-Transconductance P-Channel Algaas/Gaas Hfet's with Low-Energy Beryllium and Fluorine Co-Implantation Self-Alignment
- Richard A. Kiehl
- P.E. Hallali
- et al.
- 1991
- IEEE Electron Device Letters
Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy
- M.A. Tischler
- R.M. Potemski
- et al.
- 1991
- Journal of Crystal Growth
IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S
- T.N. Jackson
- P. Solomon
- et al.
- 1991
- IEEE T-ED
Regrown ohmic contacts to thin GaAs layers and two-dimensional electron gas
- A. Palevski
- P. Solomon
- et al.
- 1990
- Applied Physics Letters
Nonspiking ohmic contact to p-GaAs by solid-phase regrowth
- C.C. Han
- X.Z. Wang
- et al.
- 1990
- Journal of Applied Physics