X rays produced during ion implantation

Abstract

We have investigated the x rays produced when ion beams of B+, P+, and As+ are implanted into silicon over the ion energy range 20-2800 keV. The production of Si(L) x rays at 134 Å is very intense. These low-energy x rays are found to be very useful as a dose monitor when charge integration is not feasible; for example, for very low doses (<1012/cm2) and for neutral beam implantation (for currents above 2 mA).