B. Dieny, V.S. Speriosu, et al.
Journal of Applied Physics
The amount of intermixing at the interfaces of sputter-deposited spin-valve layered structures, comprising Si/Ta (50 Å)/NiFe (75 Å)/Cu (22.5 Å)/NiFe (50 Å)/FeMn (110 Å)/Ta (50 Å), were obtained from least-squares refinement of x-ray reflectivity data. The observations were modeled by layers of nominal composition with compositional inhomogeneity at the interfaces. Layer thicknesses deduced from x-ray analysis were generally within a few percent of the nominal values. Interface widths between the two NiFe layers and the Cu spacer were 6.2-7.4 Å, indicating intermixing of atoms of about three monolayers at the interfaces. A 10.0-Å interface width was found at the FeMn interface suggesting a mixed-phase layer of α- and γ-FeMn. Layer densities, except those of the less dense Ta underlayer and the oxidized Ta surface, agreed to within 10% of bulk values. The results were in agreement with those obtained from closely related Si/Ta/NiFe/Cu/NiFe/Ta, Si/Ta/NiFe/Cu/Ta, Si/Ta/NiFe/Ta, and Si/Ta films.
B. Dieny, V.S. Speriosu, et al.
Journal of Applied Physics
T.C. Huang, A. Fung, et al.
X‐Ray Spectrometry
D. Weller, A. Carl, et al.
Journal of Physics and Chemistry of Solids
Jerry Lo, L. Franco, et al.
IEEE Transactions on Magnetics