M. Yang, M. Ieong, et al.
IEDM 2003
Si/Si1-xGex heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultrahigh vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate their thermal stability. Outdiffusion of Ge from the strained Si1-xGex quantum well was observed after annealing at 850 °C. The amount of outdiffusion was comparable to that observed in Si1-xGex structures on bulk Si wafers. © 1998 American Institute of Physics.
M. Yang, M. Ieong, et al.
IEDM 2003
K.L. Lee, F. Cardone, et al.
IEDM 2003
Haizhou Yin, C.Y. Sung, et al.
IEDM 2006
Huiling Shang, J. Rubino, et al.
VLSI Technology 2005