PaperSpecial Correspondence Effect of Randomness in the Distribution of Impurity Ions on FET Thresholds in Integrated ElectronicsRobert W. KeyesIEEE JSSC
PaperTrends in the lattice "combination bands" of zincblende-type semiconductorsRobert W. KeyesThe Journal of Chemical Physics
PaperPhysical limits of silicon transistors and circuitsRobert W. KeyesReports on Progress in Physics