Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
The existing theory of the weak-localization correction to resistance in the case of short metallic wires is discussed to obtain some new physical insights. A new theoretical formula for the commonly used four-terminal geometry is derived using the formalism proposed by Doucot and Rammal. It is shown that fits to experimental data can yield substantially different values for the electron-phase relaxation length depending on the boundary conditions imposed in the theory. © 1987 The American Physical Society.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
T.N. Morgan
Semiconductor Science and Technology
R.W. Gammon, E. Courtens, et al.
Physical Review B
J.K. Gimzewski, T.A. Jung, et al.
Surface Science