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Publication
Surface Science
Paper
Vertical transport in Schottky-gated, laterally confined double-barrier quantum well heterostructures
Abstract
We investigate the conductance properties of double-barrier quantum well resonant tunneling heterostructures, laterally confined by a Schottky gate such that the confinement can be varied in a continuous and controlled way. Data on dots with nominal diameters in the submicron range are reported. © 1992.