About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
Unusually low resistivity of copper germanide thin films formed at low temperatures
Abstract
We report a first observation of the remarkably low electrical resistivity of copper germanide thin films formed at temperatures below 200°C. At these low temperatures, the ε-Cu3Ge phase with a monoclinic crystal structure is formed, with room-temperature resistivity which can be as low as 5.5 μΩ cm. The films are electrically stable up to at least 600°C, and, unlike pure copper, are also stable against oxygen and air exposure.