About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEEE Electron Device Letters
Paper
Unpinned GaAs MOS Capacitors and Transistors
Abstract
We report metal-oxide-semiconductor (MOS) capacitors and field-effect transistors (MOSFET's) in the GaAs semiconductor system using an unpinned interface. The structures utilize plasma-enhanced chemical vapor deposition (PECVD) for the silicon dioxide insulator on GaAs that has been terminated with a few monolayers of silicon during growth by molecular beam epitaxy. Interface densities in the structures have been reduced to ~ 1012 cm 2-eV High-frequency characteristics indicate strong inversion of both p-type and n-type GaAs. The excellent insulating quality of the oxide has also allowed demonstration of quasi-static characteristics. MOSFET's operating in depletion mode with a transconductance of 60 mS/mm at 8.0-pm gate lengths have been fabricated. © 1988 IEEE.