Uniaxial stress study of the quantum transitions in a strained layer (001) In_0.21Ga_0.79As/GaAs single quantum well

Abstract

We have studied the effects of large, external uniaxial stress (T) along [100] and [110] on the optical properties of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well (SQW). Because of the large stresses employed the observed energy shifts exhibit a nonlinear behavior due to the stress-induced coupling with the spin-orbit split band. For T ∥[110] the piezoelectric coupling produces an electric field along [001] which has a significant effect on both the energies and intensities of the various intersubband transitions. © 1992.