John G. Long, Peter C. Searson, et al.
JES
We have studied the effects of large, external uniaxial stress (T) along [100] and [110] on the optical properties of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well (SQW). Because of the large stresses employed the observed energy shifts exhibit a nonlinear behavior due to the stress-induced coupling with the spin-orbit split band. For T ∥[110] the piezoelectric coupling produces an electric field along [001] which has a significant effect on both the energies and intensities of the various intersubband transitions. © 1992.
John G. Long, Peter C. Searson, et al.
JES
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals