Publication
IEEE Electron Device Letters
Paper

Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate

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Abstract

Random trapping and detrapping of charged carriers in the vicinity of gate oxide/Si interface has for long been considered as the dominant noise source in Si nanowire (SiNW) FET-based biochemical sensors. Here we extend our previous work presenting a Schottky junction tri-gate SiNWFETs (SJGFET) fabricated on a bonded silicon-on-insulator (SOI) substrate, aiming for ultra-low device noise generation. The SJGFET exhibits near-ideal gate coupling efficiency with a subthreshold swing of 66 mV/dec. Its gate-referred voltage noise, S{\text {vg}} , are {1.2}\times {10}{-{10}} and {1.1}\times {10}{-{11}}\,\,\text {V}\,\,\mu \text{m} /Hz at 1 and 10 Hz, respectively. These S{\text {vg}} values are significantly lower than that of previously reported FET-based sensors. More importantly, S{\text {vg}} of the SJGFET are below the reported voltage noise generated by the oxide/electrolyte sensing interface. Using our SJGFET as the signal transducer can greatly relieve the concern of the adverse effect from the intrinsic device noise in biochemical sensing applications.

Date

01 Apr 2021

Publication

IEEE Electron Device Letters

Authors

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