About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Proceedings of the IEEE
Paper
Uhv/Cvd Growth of Si and Si:Ge Alloys: Chemistry, Physics, and Device Applications
Abstract
Over the period of the past five years, major advances in techniques for the low-temperature preparation of epitaxial films in the silicon!germanium materials system have led to remarkable progress in silicon-based device technology. The fundamental chemical principles underlying one of these growth methods, ultrahigh vacuum/chemical vapor deposition (UHV/CVD), are described in this overview. A variety of unique devices and structures, for example high-speed graded bandgap heterojunction bipolar transistors and n-type resonant tunneling diodes, will be discussed. The role of fundamental interface chemistry in making such structures possible will also be considered. © 1992 IEEE.