Two-subband screening and transport in (001)silicon inversion layers

Frank Stern

doi:10.1016/0039-6028(78)90490-9

Surface Science

Paper

01 May 1978

Two-subband screening and transport in (001)silicon inversion layers

View publication

Abstract

The effects of occupation of a second subband on screening and on scattering by fixed charges and by interface roughness are estimated for (001)Si inversion layers at low temperatures and at 77 K. © 1978.

Paper

Schottky contacts to cleaved GaAs (110) surfaces. I. Electrical properties and microscopic theories

A.B. McLean, R.H. Williams

Journal of Physics C: Solid State Physics

Paper

Light-coupling masks: An alternative, lensless approach to high-resolution optical contact lithography

Heinz Schmid, Hans Biebuyck, et al.

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Conference paper

Integration of polymer self-assembly for lithographic application

Joy Y. Cheng, Daniel P. Sanders, et al.

SPIE Advanced Lithography 2008

Paper

Fabrication of Si/SiGe quantum point contacts by electron-beam lithography and shallow wet-chemical etching

U. Wieser, U. Kunze, et al.

Physica E: Low-Dimensional Systems and Nanostructures

View all publications

Abstract

Related

Schottky contacts to cleaved GaAs (110) surfaces. I. Electrical properties and microscopic theories

Light-coupling masks: An alternative, lensless approach to high-resolution optical contact lithography

Integration of polymer self-assembly for lithographic application

Fabrication of Si/SiGe quantum point contacts by electron-beam lithography and shallow wet-chemical etching