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Conference paper
Two-regime ablative hole formation process in tellurium and tellurium-alloy films
Abstract
Based on static laser writing data, we show that the writing characteristics of Te and Te-alloy films, which have a variety of crystalline structures and void densities, can be well explained by combining a two-regime hole opening model with the well known reversible (crystalline to amorphous transition) writing process. © 1983 SPIE.
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