Two-dimensional MOSFET simulation by means of multidimensional spherical harmonics expansion of the boltzmann transport equation

Abstract

A spherical harmonics expansion method of the Boltzmann Transport Equation (BTE) is applied to investigate the carrier energy spectrum of a two-dimensional MOSFET up to 3 eV. By this method hot-electron population is obtained all over the device cross-section without the problems of statistical noise and large computational requirements typical of Monte Carlo methods.