R. Ghez, J.S. Lew
Journal of Crystal Growth
We have achieved by molecular-beam-epitaxy the new type of superlattice of InAs and GaSb whose energy gaps do not overlap. The observed Shubnikov-de Haas oscillations manifest the two-dimensional electronic subband structure, corroborating theoretical calculations. The deduced electron mass is enhanced primarily as a result of the strong nonparabolicity in the conduction-band of InAs. © 1978.
R. Ghez, J.S. Lew
Journal of Crystal Growth
J.H. Stathis, R. Bolam, et al.
INFOS 2005
David B. Mitzi
Journal of Materials Chemistry
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications