I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
We have achieved by molecular-beam-epitaxy the new type of superlattice of InAs and GaSb whose energy gaps do not overlap. The observed Shubnikov-de Haas oscillations manifest the two-dimensional electronic subband structure, corroborating theoretical calculations. The deduced electron mass is enhanced primarily as a result of the strong nonparabolicity in the conduction-band of InAs. © 1978.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Robert W. Keyes
Physical Review B
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films